- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
3,930
In-stock
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onsemi | MOSFET PFET SO8S 20V 5.6A 75mOhm | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.6 A | 75 mOhms | Enhancement | ||||
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GET PRICE |
3,626
In-stock
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onsemi | MOSFET PFET UDFN6 20V 5.6A 50MOH | 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5.6 A | 50 mOhms | 0.5 V | 10.4 nC | |||
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274,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -5.6A 50mOhm 11nC Log Lvl | 12 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.6 A | 50 mOhms | 11 nC | ||||||
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GET PRICE |
3,858
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.6 A | 27 mOhms | - 950 mV | 22.1 nC | Enhancement |
