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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,799
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.6 A | 6.7 mOhms | Enhancement | PowerTrench | |||||
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4,494
In-stock
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IR / Infineon | MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 12.5 mOhms | 1 V | 9.3 nC | Enhancement | ||||
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2,901
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 13.6 A | 110 mOhms | Enhancement | QFET | |||||
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1,682
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 13.6 A | 100 mOhms | Enhancement | QFET | |||||
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1,969
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 9.5 mOhms | 1 V | 9.3 nC |