- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,610
In-stock
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Siliconix / Vishay | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 20 A, 60 A | 0.0052 Ohms, 0.0025 Ohms | 1 V, 1 V | 22 nC, 54 nC | Enhancement | TrenchFET | ||
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2,923
In-stock
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Siliconix / Vishay | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 20 A, 60 A | 0.0074 Ohms, 0.0031 Ohms | 1 V, 1 V | 18 nC, 43 nC | Enhancement | TrenchFET |
