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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FDP047N08
1+
$3.030
10+
$2.580
100+
$2.240
250+
$2.120
RFQ
894
In-stock
Fairchild Semiconductor MOSFET 75V N-Channel PowerTrench 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 164 A 4.7 mOhms     Enhancement PowerTrench
FDB047N10
1+
$4.030
10+
$3.430
100+
$2.970
250+
$2.820
800+
$2.140
RFQ
12,690
In-stock
Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 164 A 4.7 mOhms     Enhancement PowerTrench
FDP047N10
1+
$4.870
10+
$4.140
100+
$3.590
250+
$3.400
RFQ
1,533
In-stock
Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 164 A 4.7 mOhms     Enhancement PowerTrench
IRL40B215
1+
$2.290
10+
$1.950
100+
$1.560
500+
$1.370
RFQ
2,775
In-stock
Infineon Technologies MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 164 A 3.5 mOhms 1 V 56 nC Enhancement StrongIRFET
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