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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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277
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Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | |||
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GET PRICE |
299
In-stock
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Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | CoolMOS |
