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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | |
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6,176
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Toshiba | MOSFET UFM S-MOS Pd: 0.8W F: 1MHz | 10 V | SMD/SMT | UFM-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1 mA | 28 mOhms | 13.6 nC | |||
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104
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Toshiba | MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 1 mA | 1.9 mOhms |