- Mounting Style :
- Package / Case :
- Packaging :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,831
In-stock
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STMicroelectronics | MOSFET N-Ch 200V 1.1 Ohm 1A LGC STripFET II | SMD/SMT | SOT-223-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1 A | 1.5 Ohms | ||||||||
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656
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1 A | 1.5 Ohms | Enhancement | |||||
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1,844
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CHAN | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 200 V | 1 A | 1.5 Ohms | Enhancement | |||||
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639
In-stock
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STMicroelectronics | MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1 A | 1.5 Ohms | 4 V | 5.7 nC | |||||
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33
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1 A | 1.5 Ohms | Enhancement | |||||
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3,405
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1 A | 1.5 Ohms | Enhancement |
