- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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18,753
In-stock
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Diodes Incorporated | MOSFET 100V 360mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||
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GET PRICE |
51,640
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 10 Ohms | 800 mV | Enhancement | |||
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1,366
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||
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6,053
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 2 V | 352 pC | Enhancement | ||
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GET PRICE |
16,027
In-stock
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Diodes Incorporated | MOSFET 100V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement |
