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Vgs - Gate-Source Voltage :
Packaging :
Rds On - Drain-Source Resistance :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode
STP2NK100Z
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1,079
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STMicroelectronics MOSFET N-Channel 1000V Zener SuperMESH 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 2 A 8.5 Ohms 16 nC Enhancement
STD2NK100Z
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1,000
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STMicroelectronics MOSFET N-Channel 1000V Zener SuperMESH 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 1000 V 2 A 8.5 Ohms 16 nC Enhancement
IXTP2N100P
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RFQ
34
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IXYS MOSFET 2 Amps 1000V 7.5 Rds 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 2 A 7.5 Ohms   Enhancement
IXTY2N100P
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RFQ
40
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IXYS MOSFET 2 Amps 1000V 7.5 Rds 20 V SMD/SMT TO-252-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 2 A 7.5 Ohms   Enhancement
IXTA2N100P
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RFQ
IXYS MOSFET 2 Amps 1000V 7.5 Rds 20 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 2 A 7.5 Ohms   Enhancement
IXTP2N100
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RFQ
IXYS MOSFET 2 Amps 1000V 7 Rds 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 2 A 7 Ohms   Enhancement
IXTA2N100
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RFQ
IXYS MOSFET 2 Amps 1000V 7 Rds 20 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 2 A 7 Ohms   Enhancement
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