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Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
STW56N60DM2
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RFQ
5,690
In-stock
STMicroelectronics MOSFET 25 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 50 A 60 mOhms 3 V 90 nC Enhancement  
FQB50N06TM
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RFQ
1,398
In-stock
Fairchild Semiconductor MOSFET 60V N-Channel QFET 25 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 50 A 22 mOhms     Enhancement  
STW58N60DM2AG
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RFQ
199
In-stock
STMicroelectronics MOSFET 25 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 50 A 60 mOhms 4 V 18 nC Enhancement  
FQI50N06TU
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RFQ
980
In-stock
Fairchild Semiconductor MOSFET 60V N-Channel QFET 25 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 50 A 22 mOhms     Enhancement  
FQA46N15
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RFQ
4,700
In-stock
Fairchild Semiconductor MOSFET 150V N-Channel QFET 25 V Through Hole TO-3PN-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 50 A 42 mOhms     Enhancement QFET
FQP50N06
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RFQ
25,000
In-stock
Fairchild Semiconductor MOSFET TO-220 N-CH 60V 50A 25 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 50 A 22 mOhms     Enhancement  
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