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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
TK100S04N1L,LQ
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2,000
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Toshiba MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 1.9 mOhms 2.5 V 76 nC Enhancement  
TK100L60W,VQ
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RFQ
220
In-stock
Toshiba MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF 30 V Through Hole TO-3PL-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 100 A 15 mOhms 2.7 V to 3.7 V 360 nC   DTMOSIV
TK100A10N1,S4X
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RFQ
51
In-stock
Toshiba MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V 20 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 100 V 100 A 3.1 mOhms 2 V to 4 V 140 nC Enhancement  
TK100A08N1,S4X
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RFQ
39
In-stock
Toshiba MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V 20 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 2.6 mOhms 2 V to 4 V 130 nC Enhancement  
TK100A06N1,S4X
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RFQ
Toshiba MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V 20 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 60 V 100 A 2.2 mOhms 2 V to 4 V 140 nC Enhancement  
TPH4R008NH,L1Q
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RFQ
Toshiba MOSFET U-MOSVIII-H 80V 100A 59nC MOSFET 20 V SMD/SMT SOP-Advance-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 3.3 mOhms 2 V to 4 V 59 nC   UMOSVIII
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