- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,560
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||||
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19,900
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||||
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479
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement |