- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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220
In-stock
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Toshiba | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 100 A | 15 mOhms | 2.7 V to 3.7 V | 360 nC | DTMOSIV | |||||
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39
In-stock
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Toshiba | MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement |