- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,303
In-stock
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IR / Infineon | MOSFET 20V SINGLE N-CH 1.2mOhms 155nC | 12 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 990 Ohms | 155 nC | ||||||||
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3,250
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 2.1 mOhms | 700 mV | 52.7 nC | Enhancement | OptiMOS | |||
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2,997
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 100A 4.0mOhm 2.5V dr cpbl | 12 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | |||||||||
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876
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 4mOhms 48nC | 12 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 2.1 mOhms | 700 mV | 52.7 nC | Enhancement | OptiMOS | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 0.002 Ohms | 1.5 V | 110 nC | Enhancement |
