- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
3,520
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 6.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||
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GET PRICE |
4,940
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 6.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||
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30
In-stock
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IXYS | MOSFET 94 Amps 150V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 13 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET |
