- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Rds On - Drain-Source Resistance :
-
- 0.0014 Ohms (1)
- 1.2 mOhms (3)
- 1.4 mOhms (2)
- 10 mOhms (1)
- 12.4 mOhms (1)
- 13.3 mOhms (1)
- 2.2 mOhms (1)
- 2.3 mOhms (4)
- 2.4 mOhms (1)
- 2.5 mOhms (5)
- 2.6 mOhms (1)
- 2.7 mOhms (2)
- 2.8 mOhms (2)
- 2.9 mOhms (1)
- 3.1 mOhms (2)
- 3.3 mOhms (3)
- 3.4 mOhms (1)
- 3.5 mOhms (1)
- 3.6 mOhms (2)
- 3.7 mOhms (1)
- 3.8 mOhms (1)
- 4.1 mOhms (1)
- 4.3 mOhms (1)
- 4.4 mOhms (1)
- 4.7 mOhms (1)
- 5.1 mOhms (1)
- 5.3 mOhms (1)
- 5.5 mOhms (1)
- 5.6 mOhms (3)
- 5.7 mOhms (1)
- 5.8 mOhms (1)
- 6 mOhms (1)
- 8 mOhms (1)
- 8.5 mOhms (2)
- 9 mOhms (1)
- Qg - Gate Charge :
-
- 102 nC (1)
- 104 nC (2)
- 140 nC (1)
- 143 nC (1)
- 15 nC (1)
- 17 nC (1)
- 175 nC (2)
- 19 nC (1)
- 220 nC (1)
- 28 nC (1)
- 29 nC (2)
- 30 nC (2)
- 32 nC (2)
- 34 nC (1)
- 36 nC (1)
- 41 nC (3)
- 41.3 nC (1)
- 44 nC (3)
- 47.1 nC (1)
- 49 nC (4)
- 50 nC (1)
- 58 nC (1)
- 63 nC (1)
- 66 nC (4)
- 69 nC (1)
- 75 nC (1)
- 79 nC (2)
- 90 nC (1)
- 95 nC (2)
- 95.4 nC (2)
- Tradename :
54 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Factory Pack Quantity | RoHS | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
86,500
In-stock
|
Infineon Technologies | MOSFET TRENCH 40<-<100V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 214 W | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 143 nC | 31 ns | TSON-8 | 5000 | Green available | ||||||||||
|
GET PRICE |
26,157
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | |||||||||
|
GET PRICE |
12,024
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
9,027
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | Enhancement | OptiMOS | ||||||||||
|
GET PRICE |
1,699
In-stock
|
Fairchild Semiconductor | MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.4 mOhms | 3.3 V | 75 nC | Enhancement | PowerTrench | ||||||||
|
GET PRICE |
19,130
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
4,898
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | |||||||||
|
GET PRICE |
7,644
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.4 mOhms | Enhancement | OptiMOS | ||||||||||
|
GET PRICE |
4,658
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | ||||||||||
|
GET PRICE |
3,377
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.4 mOhms | 1.2 V | 95 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
4,393
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
3,909
In-stock
|
Diodes Incorporated | MOSFET Enh Mode FET 41V to 60V TO263 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.9 mOhms | 2 V | 95.4 nC | Enhancement | |||||||||
|
GET PRICE |
4,973
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
2,500
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||||||||
|
GET PRICE |
2,495
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | 2 V | 95.4 nC | Enhancement | |||||||||
|
GET PRICE |
1,571
In-stock
|
STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | |||||||||
|
GET PRICE |
1,400
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
778
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
615
In-stock
|
Fairchild Semiconductor | MOSFET MV7 60/20V 1000A N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 6 mOhms | 2 V | 63 nC | Enhancement | |||||||||
|
GET PRICE |
685
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | |||||||||
|
GET PRICE |
311
In-stock
|
STMicroelectronics | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | |||||||||
|
GET PRICE |
494
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
177
In-stock
|
onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.8 mOhms | 1.2 V | 220 nC | Enhancement | |||||||||
|
GET PRICE |
127
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
21
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | |||||||||
|
GET PRICE |
45,980
In-stock
|
Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5 | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 1.9 V | 29 nC | NexFET | |||||||||
|
GET PRICE |
7,488
In-stock
|
Texas instruments | MOSFET 60V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 12.4 mOhms | 1.9 V | 17 nC | NexFET | |||||||||
|
GET PRICE |
2,793
In-stock
|
Texas instruments | MOSFET 60V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.6 mOhms | 1.9 V | 41 nC | NextFET | |||||||||
|
GET PRICE |
1,680
In-stock
|
Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.5 mOhms | 2.8 V | 49 nC | NexFET | |||||||||
|
GET PRICE |
909
In-stock
|
Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 13.3 mOhms | 1.9 V | 19 nC | NexFET |