- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,644
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.4 mOhms | Enhancement | OptiMOS | |||||
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1,400
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | |||
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778
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | |||
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494
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | |||
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127
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS |
