- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
124,300
In-stock
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Texas instruments | MOSFET N-CH 3.4mOhm 80V Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.4 mOhms | 2.7 V | 48 nC | NexFET | |||
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298
In-stock
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Texas instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.9 mOhms | 2.6 V | 76 nC | NexFET | ||||
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451
In-stock
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Texas instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 6.2 mOhms | 2.6 V | 38 nC | NexFET | ||||
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190
In-stock
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Texas instruments | MOSFET 80V 7.6mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 8.8 mOhms | 2.8 V | 28 nC | Enhancement | NexFET | |||
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347
In-stock
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Texas instruments | MOSFET N-Channel, 3.4mOhm 80V | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.8 mOhms | 2.2 V | 48 nC | Enhancement | NexFET |
