MOSFET - Kaimeite

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8 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFZ140N25T		GET PRICE	PDF RFQ	100 In-stock	IXYS	MOSFET	20 V	SMD/SMT	DE-475-6	- 55 C	+ 150 C		1 Channel	Si	N-Channel	250 V	100 A	17 mOhms	2.5 V	255 nC	Enhancement	GigaMOS, HiperFET
	IXTQ100N25P		GET PRICE	PDF RFQ	50 In-stock	IXYS	MOSFET 100 Amps 250V 0.027 Rds	20 V	Through Hole	TO-3P-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	250 V	100 A	27 mOhms	5 V	185 nC	Enhancement	PolarHT
	IXTT100N25P		GET PRICE	PDF RFQ	92 In-stock	IXYS	MOSFET 100 Amps 250V 0.027 Rds	20 V	SMD/SMT	TO-268-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	250 V	100 A	27 mOhms	5 V	185 nC	Enhancement	PolarHT
	IXTK100N25P		GET PRICE	PDF RFQ	22 In-stock	IXYS	MOSFET 100 Amps 250V 0.027 Rds	20 V	Through Hole	TO-264-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	250 V	100 A	27 mOhms			Enhancement
	IXFH100N25P		GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 100 Amps 250V 0.027 Rds	20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	250 V	100 A	27 mOhms	5 V	185 nC	Enhancement	PolarHT, HiPerFET
	IXFN100N25		GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 100 Amps 250V 0.027 Rds	20 V	Chassis Mount	SOT-227-4	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	250 V	100 A	27 mOhms			Enhancement	HyperFET
	IXFX100N25		GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 100 Amps 250V 0.027 Rds	20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	250 V	100 A	27 mOhms			Enhancement	HyperFET
	IXFK100N25		GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 100 Amps 250V 0.027 Rds	20 V	Through Hole	TO-264-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	250 V	100 A	27 mOhms			Enhancement	HyperFET

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