- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,379
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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20,590
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.15mOhms 52nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.15 mOhms | 52 nC | ||||||||
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1,747
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.05 mOhms | 2.35 V | 52 nC | |||||||
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1,894
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | OptiMOS | |||
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4,535
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | OptiMOS |
