- Manufacture :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
5,527
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | |||
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GET PRICE |
2,997
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 100A 4.0mOhm 2.5V dr cpbl | 12 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | ||||||||
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GET PRICE |
876
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 4mOhms 48nC | 12 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | |||||||
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GET PRICE |
8,840
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | ||
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GET PRICE |
5,000
In-stock
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Texas instruments | MOSFET N-Channel NexFET Pwr MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 4 mOhms | 1.2 V | 6.2 nC | NexFET | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | OptiMOS |
