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Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC057N08NS3 G
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RFQ
18,180
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Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 4.7 mOhms 2 V 56 nC Enhancement OptiMOS
BSC035N10NS5ATMA1
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RFQ
13,530
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Infineon Technologies MOSFET 100VPower transistor OptiMOS 5 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 100 A 4.7 mOhms 2.2 V 70 nC Enhancement  
BSC057N08NS3GATMA1
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RFQ
5,088
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Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 4.7 mOhms 2 V 56 nC Enhancement OptiMOS
IPB100N08S2L07ATMA1
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RFQ
Infineon Technologies MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 100 A 4.7 mOhms 1.2 V 246 nC Enhancement  
2SK4066-DL-1E
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RFQ
746
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onsemi MOSFET NCH 4V DRIVE SERIES     TO-262-3     Reel 1 Channel Si N-Channel 60 V 100 A 4.7 mOhms        
IPB100N06S2-05
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RFQ
530
In-stock
Infineon Technologies MOSFET N-Ch 55V 100A D2PAK-2 OptiMOS 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 55 V 100 A 4.7 mOhms     Enhancement OptiMOS
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