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Package / Case :
Maximum Operating Temperature :
Packaging :
Technology :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP075N15N3 G
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RFQ
3,520
In-stock
Infineon Technologies MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 100 A 6.2 mOhms 2 V 93 nC Enhancement OptiMOS
IPP075N15N3GXKSA1
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RFQ
4,940
In-stock
Infineon Technologies MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 100 A 6.2 mOhms 2 V 93 nC Enhancement OptiMOS
CSD18503Q5A
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RFQ
43,600
In-stock
Texas instruments MOSFET 40V N-Channel NexFET Power MOSFET 20 V SMD/SMT VSONP-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 6.2 mOhms 1.8 V 26 nC   NexFET
CSD19501KCS
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RFQ
451
In-stock
Texas instruments MOSFET 80V N-CH NexFET Pwr MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 100 A 6.2 mOhms 2.6 V 38 nC   NexFET
IPP06CN10L G
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RFQ
100
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel GaN N-Channel 100 V 100 A 6.2 mOhms     Enhancement  
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