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Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP048N12N3 G
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RFQ
503
In-stock
Infineon Technologies MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 120 V 100 A 4.8 mOhms 3 V 137 nC   OptiMOS
IPP100N10S3-05
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RFQ
559
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 100 A 4.8 mOhms     Enhancement OptiMOS
IPB100N10S3-05
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RFQ
2,000
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 100 A 4.8 mOhms     Enhancement OptiMOS
CSD19502Q5BT
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RFQ
347
In-stock
Texas instruments MOSFET N-Channel, 3.4mOhm 80V 20 V SMD/SMT VSON-Clip-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 4.8 mOhms 2.2 V 48 nC Enhancement NexFET
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