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Package / Case :
Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC047N08NS3 G
1+
$2.230
10+
$1.900
100+
$1.520
500+
$1.330
5000+
$0.984
RFQ
2,086
In-stock
Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 3.9 mOhms 2 V 69 nC Enhancement OptiMOS
IPP045N10N3GXKSA1
GET PRICE
RFQ
13,330
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 100 A 3.9 mOhms 2 V 117 nC Enhancement OptiMOS
BSC047N08NS3GATMA1
1+
$2.230
10+
$1.900
100+
$1.520
500+
$1.330
5000+
$0.984
RFQ
4,813
In-stock
Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 3.9 mOhms 2 V 69 nC Enhancement OptiMOS
IPP045N10N3 G
GET PRICE
RFQ
12,030
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 100 A 3.9 mOhms 2 V 117 nC Enhancement OptiMOS
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