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Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC010N04LS
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RFQ
9,800
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Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1 MOhms 1.2 V 133 nC Enhancement  
BSC010N04LSATMA1
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RFQ
10,490
In-stock
Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1 MOhms 1.2 V 133 nC Enhancement OptiMOS
BSC009NE2LS
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RFQ
4,630
In-stock
Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 100 A 1 MOhms 1 V 168 nC Enhancement  
BSC009NE2LSXT
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RFQ
5,000
In-stock
Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 100 A 1 MOhms 1 V 168 nC Enhancement OptiMOS
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