- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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503
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 4.8 mOhms | 3 V | 137 nC | OptiMOS | |||
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473
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 7.6 mOhms | 3 V | 76 nC | OptiMOS | |||
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9,390
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.7 mOhms | 3 V | 91 nC | Enhancement | OptiMOS | ||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | PowerDI |
