- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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397
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | |||
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84
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | |||
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14,410
In-stock
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Texas instruments | MOSFET 100V 5.3mOhm Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6 mOhms | 2.7 V | 37 nC | Enhancement | NexFET | ||
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GET PRICE |
124,300
In-stock
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Texas instruments | MOSFET N-CH 3.4mOhm 80V Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.4 mOhms | 2.7 V | 48 nC | NexFET | |||
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GET PRICE |
431
In-stock
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Texas instruments | MOSFET 100V,5.3mOhm,NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6 mOhms | 2.7 V | 37 nC | Enhancement | NexFET |
