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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
CSD19533KCS
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RFQ
215
In-stock
Texas instruments MOSFET 100V 8.7mOhm N-CH Pwr MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 100 A 10.5 mOhms 2.8 V 27 nC Enhancement NexFET
CSD19533Q5A
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RFQ
5,000
In-stock
Texas instruments MOSFET 100V 7.8mOhm N-CH Pwr MOSFET 20 V SMD/SMT VSONP-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 100 A 8.7 mOhms 2.8 V 27 nC Enhancement NexFET
BSC882N03LS G
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RFQ
5,000
In-stock
Infineon Technologies MOSFET N-Ch 34V 100A SON-8 2 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 34 V 100 A 2.2 mOhms   27 nC    
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