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Packaging :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
CSD18502Q5B
1+
$2.230
10+
$2.000
25+
$1.900
100+
$1.610
2500+
$0.945
RFQ
1,934
In-stock
Texas instruments MOSFET 40-V N-Ch NexFET Pwr MOSFET 20 V SMD/SMT VSON-Clip-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 3.3 mOhms 1.8 V 52 nC   NexFET
CSD18502KCS
1+
$2.150
10+
$1.930
25+
$1.830
100+
$1.550
RFQ
5,230
In-stock
Texas instruments MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 40 V 100 A 4.3 mOhms 1.8 V 52 nC   NexFET
CSD18502Q5BT
1+
$2.440
10+
$2.190
25+
$2.090
100+
$1.760
250+
$1.650
RFQ
502
In-stock
Texas instruments MOSFET 40-V, N-Channel NexFET? Power MOSFET 8-VSON-CLI... 20 V SMD/SMT VSON-Clip-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 3.3 mOhms 1.5 V 52 nC Enhancement NexFET
BSC022N04LS
1+
$1.340
10+
$1.150
100+
$0.878
500+
$0.776
5000+
$0.543
RFQ
4,933
In-stock
Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1.8 mOhms 1.2 V 52 nC Enhancement  
BSC022N04LSATMA1
1+
$1.340
10+
$1.150
100+
$0.878
500+
$0.776
5000+
$0.543
RFQ
10,000
In-stock
Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1.8 mOhms 1.2 V 52 nC Enhancement OptiMOS
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