MOSFET - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPB026N06NATMA1		GET PRICE	PDF RFQ	778 In-stock	Infineon Technologies	MOSFET N-Ch 60V 100A D2PAK-2	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	100 A	2.3 mOhms	2.1 V	66 nC	Enhancement	OptiMOS
	IPP029N06N		GET PRICE	PDF RFQ	685 In-stock	Infineon Technologies	MOSFET N-Ch 60V 100A TO220-3	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	100 A	2.7 mOhms	2.1 V	66 nC	Enhancement
	AUIRFR8403		GET PRICE	PDF RFQ	391 In-stock	IR / Infineon	MOSFET Auto 40V N-Ch FET 3.1mOhms 100A	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	100 A	3.1 mOhms	2.2 V to 3.9 V	66 nC	Enhancement	CoolIRFet
	IPP029N06NAKSA1		GET PRICE	PDF RFQ	494 In-stock	Infineon Technologies	MOSFET N-Ch 60V 100A TO220-3	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	100 A	2.7 mOhms	2.1 V	66 nC	Enhancement	OptiMOS
	IPB026N06N		GET PRICE	PDF RFQ	21 In-stock	Infineon Technologies	MOSFET N-Ch 60V 100A D2PAK-2	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	100 A	2.3 mOhms	2.1 V	66 nC	Enhancement
	AUIRFU8403		GET PRICE	PDF RFQ	25 In-stock	Infineon Technologies	MOSFET Auto 40V N-Ch FET 2.4mOhm 100A	20 V	Through Hole	TO-251-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	100 A	3.1 mOhms	2.2 V to 3.9 V	66 nC	Enhancement	CoolIRFet
	AUIRFR8403TRL		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET Auto 40V N-Ch FET 3.1mOhms 100A		SMD/SMT	TO-252-3			Reel	1 Channel	Si	N-Channel	40 V	100 A	2.4 mOhms		66 nC		CoolIRFet

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