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Package / Case :
Packaging :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB100N08S2L-07
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963
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Infineon Technologies MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 100 A 6.5 mOhms 1.2 V 246 nC Enhancement OptiMOS
IPP100N08S2L-07
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RFQ
602
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Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 100 A 5 mOhms 1.2 V 246 nC Enhancement OptiMOS
IPP100N08S2L07AKSA1
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Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 100 A 5 mOhms 1.2 V 246 nC Enhancement  
IPB100N08S2L07ATMA1
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RFQ
Infineon Technologies MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 100 A 4.7 mOhms 1.2 V 246 nC Enhancement  
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