MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPD031N06L3GATMA1	1+ $1.850 10+ $1.570 100+ $1.260 500+ $1.100 2500+ $0.847		PDF RFQ	1,400 In-stock	Infineon Technologies	MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	100 A	2.5 mOhms	1.2 V	79 nC	Enhancement	OptiMOS
	IPD031N06L3 G	1+ $1.850 10+ $1.570 100+ $1.260 500+ $1.100 2500+ $0.847		PDF RFQ	127 In-stock	Infineon Technologies	MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	100 A	2.5 mOhms	1.2 V	79 nC	Enhancement	OptiMOS
	BSC028N06NSATMA1	1+ $1.980 10+ $1.680 100+ $1.350 500+ $1.180 5000+ $0.874		PDF RFQ	15,000 In-stock	Infineon Technologies	MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	100 A	2.5 mOhms	2.1 V	49 nC	Enhancement	OptiMOS

IPD031N06L3GATMA1

IPD031N06L3GATMA1

Infineon Technologies

MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3

Stock : 1,400

1+: $1.850

10+: $1.570

100+: $1.260

500+: $1.100

2500+: $0.847

IPD031N06L3 G

IPD031N06L3 G

Infineon Technologies

MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3

Stock : 127

1+: $1.850

10+: $1.570

100+: $1.260

500+: $1.100

2500+: $0.847

BSC028N06NSATMA1

BSC028N06NSATMA1

Infineon Technologies

MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3

Stock : 15,000

1+: $1.980

10+: $1.680

100+: $1.350

500+: $1.180

5000+: $0.874

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