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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQD100N04-3m6_GE3
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RFQ
1,906
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Vishay Semiconductors MOSFET N-Channel 40V AEC-Q101 Qualified +/- 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 0.003 Ohms 2.5 V 105 nC Enhancement TrenchFET
SQD100N03-3M2L_GE3
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RFQ
1,965
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Vishay Semiconductors MOSFET 30V 100A 136W N-Channel MOSFET +/- 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 100 A 0.0027 Ohms 1.5 V 116 nC Enhancement TrenchFET
SQM100N10-10_GE3
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RFQ
696
In-stock
Vishay Semiconductors MOSFET 100V 100A 375W AEC-Q101 Qualified +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 100 A 0.007 Ohms 1.5 V 185 nC Enhancement TrenchFET
SQM100N04-2m7_GE3
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RFQ
800
In-stock
Vishay Semiconductors MOSFET 40V 100A 157W AEC-Q101 Qualified +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 0.00225 Ohms 2.5 V 145 nC Enhancement TrenchFET
SQD100N04-3m6L_GE3
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RFQ
Siliconix / Vishay MOSFET N-Channel 40V AEC-Q101 Qualified +/- 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 0.003 Ohms 1.5 V 130 nC Enhancement TrenchFET
SQD100N03-3M4_GE3
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RFQ
Vishay Semiconductors MOSFET 30V 100A 136W N-Channel MOSFET +/- 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 100 A 0.0028 Ohms 2.5 V 124 nC Enhancement TrenchFET
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