MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	STP100N6F7	1+ $1.730 10+ $1.470 100+ $1.170 500+ $1.030		PDF RFQ	1,571 In-stock	STMicroelectronics	MOSFET	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	100 A	5.6 mOhms	2 V	30 nC	Enhancement
	STB100N6F7	1+ $1.990 10+ $1.690 100+ $1.350 500+ $1.190		PDF RFQ	311 In-stock	STMicroelectronics	MOSFET	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	100 A	5.6 mOhms	2 V	30 nC	Enhancement
	IRFH5106TRPBF	1+ $1.740 10+ $1.480 100+ $1.180 500+ $1.030 4000+ $0.767		PDF RFQ	3,949 In-stock	IR / Infineon	MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC	20 V	SMD/SMT	PQFN-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	100 A	5.6 mOhms		50 nC	Enhancement

STP100N6F7

STP100N6F7

STMicroelectronics

MOSFET

Stock : 1,571

1+: $1.730

10+: $1.470

100+: $1.170

500+: $1.030

STB100N6F7

STB100N6F7

STMicroelectronics

MOSFET

Stock : 311

1+: $1.990

10+: $1.690

100+: $1.350

500+: $1.190

IRFH5106TRPBF

IRFH5106TRPBF

IR / Infineon

MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC

Stock : 3,949

1+: $1.740

10+: $1.480

100+: $1.180

500+: $1.030

4000+: $0.767

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