- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (2)
- 1.4 mOhms (2)
- 12.4 mOhms (1)
- 13.3 mOhms (1)
- 2.2 mOhms (1)
- 2.3 mOhms (2)
- 2.4 mOhms (1)
- 2.5 mOhms (3)
- 2.6 mOhms (1)
- 2.8 mOhms (2)
- 3.1 mOhms (1)
- 3.3 mOhms (2)
- 3.5 mOhms (1)
- 3.6 mOhms (2)
- 3.8 mOhms (1)
- 4.1 mOhms (1)
- 4.3 mOhms (1)
- 4.4 mOhms (1)
- 5.3 mOhms (1)
- 5.6 mOhms (1)
- 5.7 mOhms (1)
- 5.8 mOhms (1)
- 8.5 mOhms (2)
- 9 mOhms (1)
- Tradename :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26,157
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | |||||
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12,024
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||
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9,027
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | Enhancement | OptiMOS | ||||||
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1,699
In-stock
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Fairchild Semiconductor | MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.4 mOhms | 3.3 V | 75 nC | Enhancement | PowerTrench | ||||
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19,130
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||
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4,898
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | |||||
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4,658
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | ||||||
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3,377
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.4 mOhms | 1.2 V | 95 nC | Enhancement | OptiMOS | ||||
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4,393
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | OptiMOS | ||||
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4,973
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | OptiMOS | ||||
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177
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.8 mOhms | 1.2 V | 220 nC | Enhancement | |||||
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GET PRICE |
45,980
In-stock
|
Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5 | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 1.9 V | 29 nC | NexFET | ||||
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7,488
In-stock
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Texas instruments | MOSFET 60V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 12.4 mOhms | 1.9 V | 17 nC | NexFET | |||||
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2,793
In-stock
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Texas instruments | MOSFET 60V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.6 mOhms | 1.9 V | 41 nC | NextFET | |||||
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1,680
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.5 mOhms | 2.8 V | 49 nC | NexFET | |||||
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909
In-stock
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Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 13.3 mOhms | 1.9 V | 19 nC | NexFET | |||||
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796
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.7 mOhms | 2 V | 15 nC | Enhancement | NexFET | ||||
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555
In-stock
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Texas instruments | MOSFET 60V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.5 V | 58 nC | Enhancement | |||||
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546
In-stock
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Texas instruments | MOSFET 60V N-Chnl NxFT Pwr MSFT .. | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 9 mOhms | 1.9 V | 28 nC | NexFET | |||||
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400
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 1.5 V | 29 nC | Enhancement | NexFET | ||||
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241
In-stock
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Texas instruments | MOSFET 60-V N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.4 mOhms | 2.4 V | 49 nC | Enhancement | NexFET | ||||
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14,900
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.4 mOhms | 1.2 V | 95 nC | Enhancement | |||||
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14,957
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 2.1 V | 49 nC | Enhancement | |||||
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15,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 2.1 V | 49 nC | Enhancement | OptiMOS | ||||
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14,860
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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10,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
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53,670
In-stock
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Texas instruments | MOSFET 60-V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.3 mOhms | 1.8 V | 44 nC | NexFET | |||||
|
699
In-stock
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Texas instruments | MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.3 mOhms | 1.8 V | 44 nC | NexFET | |||||
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1,150
In-stock
|
Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.8 mOhms | 1.5 V | 36 nC | Enhancement | NexFET | ||||
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VIEW | Toshiba | MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.2 mOhms | 2 V to 4 V | 140 nC | Enhancement |