MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IRFH5302TRPBF	1+ $1.030 10+ $0.873 100+ $0.671 500+ $0.593 4000+ $0.415		PDF RFQ	4,286 In-stock	IR / Infineon	MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC	20 V	SMD/SMT	PQFN-8			Reel	1 Channel	Si	N-Channel	30 V	100 A	2.1 mOhms		29 nC
	BSC025N03LSGATMA1	1+ $1.150 10+ $0.977 100+ $0.751 500+ $0.663 5000+ $0.465		PDF RFQ	4,930 In-stock	Infineon Technologies	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	100 A	2.1 mOhms	1 V	74 nC	Enhancement	OptiMOS
	BSC025N03LS G	1+ $1.150 10+ $0.977 100+ $0.751 500+ $0.663 5000+ $0.465		PDF RFQ	1,179 In-stock	Infineon Technologies	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	100 A	2.1 mOhms	1 V	74 nC	Enhancement	OptiMOS

IRFH5302TRPBF

IRFH5302TRPBF

IR / Infineon

MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC

Stock : 4,286

1+: $1.030

10+: $0.873

100+: $0.671

500+: $0.593

4000+: $0.415

BSC025N03LSGATMA1

BSC025N03LSGATMA1

Infineon Technologies

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

Stock : 4,930

1+: $1.150

10+: $0.977

100+: $0.751

500+: $0.663

5000+: $0.465

BSC025N03LS G

BSC025N03LS G

Infineon Technologies

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

Stock : 1,179

1+: $1.150

10+: $0.977

100+: $0.751

500+: $0.663

5000+: $0.465

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