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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC046N10NS3 G
1+
$2.960
10+
$2.510
100+
$2.180
250+
$2.070
5000+
$1.430
RFQ
5,527
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A TDSON-8 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 100 A 4 mOhms 2 V 63 nC Enhancement  
CSD17577Q3A
1+
$0.700
10+
$0.621
25+
$0.596
100+
$0.476
2500+
$0.235
RFQ
8,840
In-stock
Texas instruments MOSFET 30V, N-channel NexFET Pwr MOSFET 20 V SMD/SMT VSONP-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 100 A 4 mOhms 1.1 V 35 nC Enhancement NexFET
BSC046N10NS3GATMA1
1+
$2.960
10+
$2.510
100+
$2.180
250+
$2.070
5000+
$1.430
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 100V 100A TDSON-8 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 100 A 4 mOhms 2 V 63 nC Enhancement OptiMOS
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