- Package / Case :
- Rds On - Drain-Source Resistance :
-
- 1.7 mOhms (1)
- 1.9 mOhms (2)
- 1.98 mOhms (1)
- 10 mOhms (1)
- 2.1 mOhms (2)
- 2.3 mOhms (2)
- 2.5 mOhms (3)
- 2.7 mOhms (3)
- 2.8 mOhms (2)
- 2.9 mOhms (2)
- 3.1 mOhms (2)
- 3.3 mOhms (1)
- 3.4 mOhms (1)
- 3.6 mOhms (3)
- 4.25 mOhms (1)
- 4.7 mOhms (2)
- 4.8 mOhms (1)
- 4.9 mOhms (1)
- 5.6 mOhms (1)
- 5.8 mOhms (2)
- 6 mOhms (1)
- 6.5 mOhms (1)
- 7 mOhms (1)
- 7.1 mOhms (1)
- 7.6 mOhms (1)
- 8.4 mOhms (1)
- Tradename :
40 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,260
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
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9,977
In-stock
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Fairchild Semiconductor | MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 8.4 mOhms | 2 V | 68 nC | Enhancement | ||||
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29,560
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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7,644
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.4 mOhms | Enhancement | OptiMOS | |||||
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3,909
In-stock
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Diodes Incorporated | MOSFET Enh Mode FET 41V to 60V TO263 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.9 mOhms | 2 V | 95.4 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | ||||
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2,495
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | 2 V | 95.4 nC | Enhancement | ||||
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690
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS | |||
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1,400
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | |||
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963
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 6.5 mOhms | 1.2 V | 246 nC | Enhancement | OptiMOS | |||
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778
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | |||
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920
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 7.1 mOhms | Enhancement | OptiMOS | |||||
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1,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | ||||
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2,300
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 7.6 mOhms | 2 V | 41.9 nC | Enhancement | ||||
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507
In-stock
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Fairchild Semiconductor | MOSFET 40V 100A N-Chnl Pwr Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1 V | 96 nC | Enhancement | PowerTrench | |||
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615
In-stock
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Fairchild Semiconductor | MOSFET MV7 60/20V 1000A N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 6 mOhms | 2 V | 63 nC | Enhancement | ||||
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19,900
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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GET PRICE |
9,390
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.7 mOhms | 3 V | 91 nC | Enhancement | OptiMOS | ||
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391
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 3.1mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.1 mOhms | 2.2 V to 3.9 V | 66 nC | Enhancement | CoolIRFet | |||
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822
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 4.3mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 3.9 V | 42 nC | Enhancement | CoolIRFet | |||
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479
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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311
In-stock
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STMicroelectronics | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
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373
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 2 V | 90 nC | Enhancement | OptiMOS | |||
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779
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 68.6 nC | Enhancement | ||||
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127
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.8 mOhms | Enhancement | OptiMOS | |||||
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21
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | ||||
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100
In-stock
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IXYS | MOSFET 100 Amps 40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | ||||||
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2,000
In-stock
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Toshiba | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 2.5 V | 76 nC | Enhancement |