- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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1,772
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1.1 V | 28 nC | NexFET | |||
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2,895
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.3 mOhms | 1.2 V | 24 nC | NexFET | |||
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3,674
In-stock
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Texas instruments | MOSFET 30V NCh NexFET Pwr MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 9.4 mOhms | 1.3 V | 3.9 nC | NexFET | |||
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3,851
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 8.8 mOhms | 1.3 V | 5.1 nC | NexFET | |||
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722
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.6 mOhms | 1.1 V | 18 nC | NexFET |
