- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,615
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | ||||||
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228
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.65mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.98 mOhms | 2.2 V to 3.9 V | 103 nC | Enhancement | CoolIRFet | ||||
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410
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.4 mOhms | OptiMOS | ||||||||||
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604
In-stock
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IXYS | MOSFET 100 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||||
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384
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 3.2mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 2.2 V to 3.9 V | 42 nC | Enhancement | CoolIRFet | ||||
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25
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 2.4mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.1 mOhms | 2.2 V to 3.9 V | 66 nC | Enhancement | CoolIRFet | ||||
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5,230
In-stock
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Texas instruments | MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.3 mOhms | 1.8 V | 52 nC | NexFET | |||||
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290
In-stock
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Texas instruments | MOSFET 40V N-Ch NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 10 mOhms | 1.9 V | 19 nC | NexFET | |||||
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366
In-stock
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Texas instruments | MOSFET 40V N-Ch NexFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 6.8 mOhms | 1.9 V | 30 nC | NexFET | |||||
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276
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | Enhancement | OptiMOS | ||||||
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400
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 3-TO-220 -55 t... | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.4 mOhms | 1.4 V | 153 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 135 nC | Enhancement | |||||
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475
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | Enhancement | OptiMOS |