- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.0027 Ohms (1)
- 0.0028 Ohms (1)
- 1.1 mOhms (1)
- 1.2 mOhms (3)
- 1.3 mOhms (4)
- 1.5 mOhms (1)
- 1.6 mOhms (2)
- 1.7 mOhms (7)
- 1.8 mOhms (1)
- 1.85 mOhms (1)
- 1.9 mOhms (1)
- 11.8 mOhms (2)
- 12.1 mOhms (1)
- 12.4 mOhms (1)
- 15.5 mOhms (2)
- 2.1 mOhms (3)
- 2.2 mOhms (3)
- 2.3 mOhms (1)
- 2.5 mOhms (5)
- 2.6 mOhms (1)
- 2.8 mOhms (2)
- 26 mOhms (1)
- 29 mOhms (1)
- 3 mOhms (1)
- 3.4 mOhms (1)
- 3.7 mOhms (1)
- 4 mOhms (1)
- 4.2 mOhms (1)
- 4.6 mOhms (1)
- 5.1 mOhms (1)
- 5.3 mOhms (1)
- 5.4 mOhms (1)
- 8.8 mOhms (1)
- 840 uOhms (1)
- 9 mOhms (1)
- 9.4 mOhms (1)
- 900 uOhms (3)
- 950 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 11.8 nC (1)
- 116 nC (1)
- 124 nC (1)
- 13.2 nC (1)
- 131 nC (5)
- 18 nC (1)
- 19 nC (1)
- 2.1 nC (1)
- 2.4 nC (1)
- 2.8 nC (3)
- 23 nC (1)
- 24 nC (1)
- 26 nC (1)
- 28 nC (1)
- 28.5 nC (1)
- 29 nC (1)
- 3.6 nC (1)
- 3.9 nC (1)
- 30 nC (1)
- 35 nC (3)
- 39 nC (2)
- 4 nC (1)
- 41 nC (1)
- 44 nC (2)
- 5.1 nC (1)
- 5.4 nC (1)
- 50 nC (1)
- 51 nC (1)
- 52 nC (2)
- 55 nC (2)
- 58 nC (1)
- 6 nC (1)
- 6.4 nC (1)
- 60 nC (1)
- 64 nC (1)
- 68 nC (1)
- 73 nC (2)
- 74 nC (2)
- 77 nC (1)
- 8.3 nC (1)
- 90 nC (1)
- 93 nC (3)
- 96 nC (2)
- Tradename :
63 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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20,446
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 96 nC | Enhancement | OptiMOS | ||||
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15,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 93 nC | Enhancement | OptiMOS | ||||
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6,105
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | ||||
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7,471
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | ||||
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12,490
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | ||||
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3,685
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | ||||
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2,619
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.2 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | ||||
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4,286
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 29 nC | |||||||||
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3,942
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 41 nC | Enhancement | |||||
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3,369
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | OptiMOS | |||||||
|
6,985
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | ||||
|
3,857
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.1 mOhms | 2.2 V | 58 nC | ||||||||
|
4,541
In-stock
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IR / Infineon | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 26 nC | |||||||||
|
4,930
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | ||||
|
4,836
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | ||||
|
2,975
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||||
|
5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | ||||
|
3,990
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 2.35 V | 50 nC | ||||||||
|
2,566
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.8 mOhms | 1 V | 52 nC | Enhancement | OptiMOS | ||||
|
1,642
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 93 nC | Enhancement | OptiMOS | ||||
|
1,965
In-stock
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Vishay Semiconductors | MOSFET 30V 100A 136W N-Channel MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 0.0027 Ohms | 1.5 V | 116 nC | Enhancement | TrenchFET | ||||
|
988
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 90 nC | Enhancement | |||||
|
1,179
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | ||||
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943
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.85 mOhms | 1.8 V | 77 nC | ||||||
|
8,840
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | ||||
|
2,474
In-stock
|
Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.7 mOhms | 1.3 V | 13.2 nC | NexFET | |||||
|
4,725
In-stock
|
Texas instruments | MOSFET 30V N Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.5 mOhms | 1.4 V | 39 nC | NexFET | |||||
|
1,772
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1.1 V | 28 nC | NexFET | |||||
|
2,257
In-stock
|
Texas instruments | MOSFET 30V N-Ch NexFET Power MOSFETs | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.8 mOhms | 1.4 V | 28.5 nC | NexFET | |||||
|
2,895
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.3 mOhms | 1.2 V | 24 nC | NexFET |