- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.00225 Ohms (1)
- 0.003 Ohms (2)
- 0.79 mOhms (1)
- 1 MOhms (2)
- 1.1 mOhms (2)
- 1.13 mOhms (1)
- 1.2 mOhms (2)
- 1.3 mOhms (5)
- 1.5 mOhms (4)
- 1.65 mOhms (1)
- 1.7 mOhms (1)
- 1.8 mOhms (2)
- 1.9 mOhms (3)
- 2 mOhms (1)
- 2.1 mOhms (4)
- 2.3 mOhms (2)
- 2.4 mOhms (1)
- 2.5 mOhms (3)
- 2.7 mOhms (1)
- 2.8 mOhms (2)
- 2.9 mOhms (3)
- 3.2 mOhms (1)
- 3.3 mOhms (3)
- 3.4 mOhms (1)
- 4.1 mOhms (1)
- 4.25 mOhms (1)
- 4.9 mOhms (1)
- 6.2 mOhms (1)
- 7.6 mOhms (1)
- 9.8 mOhms (1)
- 900 uOhms (2)
- Qg - Gate Charge :
-
- 103 nC (1)
- 105 nC (1)
- 122 nC (2)
- 130 nC (1)
- 133 nC (2)
- 145 nC (1)
- 150 nC (5)
- 153 nC (1)
- 16 nC (1)
- 26 nC (1)
- 32 nC (1)
- 38 nC (1)
- 41.9 nC (2)
- 42 nC (1)
- 45 nC (2)
- 52 nC (4)
- 57 nC (2)
- 59 nC (2)
- 61 nC (2)
- 64 nC (2)
- 66 nC (1)
- 68.6 nC (2)
- 76 nC (1)
- 77 nC (2)
- 82 nC (3)
- 85 nC (4)
- 86 nC (1)
- 90 nC (2)
- 91 nC (1)
- 96 nC (1)
- 98 nC (2)
57 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
25,074
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.3 mOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
|
9,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | |||||
|
10,490
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | OptiMOS | ||||
|
3,543
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.1 mOhms | 1.2 V | 85 nC | Enhancement | |||||
|
2,312
In-stock
|
Fairchild Semiconductor | MOSFET NCh40V100A,1.5m ohms PowerTrench MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 100 A | 1.13 mOhms | PowerTrench | |||||||||
|
3,733
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 900 uOhms | 1.2 V | 122 nC | Enhancement | |||||
|
14,101
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
|
GET PRICE |
6,539
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.2 mOhms | 1.2 V | 77 nC | Enhancement | ||||
|
4,507
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
|
1,382
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms | 16 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.2 mOhms | 82 nC | |||||||||
|
11,035
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement | OptiMOS | ||||
|
5,125
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
|
3,468
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
|
1,486
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2 mOhms | 86 nC | PowerTrench | ||||||||
|
1,906
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
|
GET PRICE |
800
In-stock
|
Vishay Semiconductors | MOSFET 40V 100A 157W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.00225 Ohms | 2.5 V | 145 nC | Enhancement | TrenchFET | |||
|
1,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | |||||
|
2,300
In-stock
|
Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement | |||||
|
2,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 7.6 mOhms | 2 V | 41.9 nC | Enhancement | |||||
|
507
In-stock
|
Fairchild Semiconductor | MOSFET 40V 100A N-Chnl Pwr Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1 V | 96 nC | Enhancement | PowerTrench | ||||
|
714
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | |||||
|
GET PRICE |
9,390
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.7 mOhms | 3 V | 91 nC | Enhancement | OptiMOS | |||
|
373
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 2 V | 90 nC | Enhancement | OptiMOS | ||||
|
1,010
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 4.3mOhms 100A | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 42 nC | CoolIRFet | |||||||||
|
779
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 68.6 nC | Enhancement | |||||
|
GET PRICE |
7,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.3 mOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
|
1,990
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.3 V | 98 nC | Enhancement | |||||
|
2,325
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.1 mOhms | 1.5 V | 38 nC | Enhancement | |||||
|
250
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 1.5 V | 82 nC | Enhancement | NexFET |