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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FDL100N50F
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431
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Fairchild Semiconductor MOSFET UniFET 500V 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 100 A 43 mOhms     Enhancement UniFET
IXFK100N65X2
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397
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IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 100 A 30 mOhms 2.7 V 180 nC Enhancement  
IXTK100N25P
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22
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IXYS MOSFET 100 Amps 250V 0.027 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 100 A 27 mOhms     Enhancement  
APT20M22LVRG
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12
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Microsemi MOSFET Power MOSFET - MOS5 30 V Through Hole TO-264-3 - 55 C + 150 C   1 Channel Si N-Channel 200 V 100 A 22 mOhms 2 V 435 nC Enhancement  
APT20M22LVFRG
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14
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Microsemi MOSFET Power FREDFET - MOS5 30 V Through Hole TO-264-3 - 55 C + 150 C     Si N-Channel 200 V 100 A 22 mOhms 4 V 290 nC Enhancement Power MOS V
IXFK100N10
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IXYS MOSFET 100 Amps 100V 0.012 Ohm Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 100 V 100 A 12 mOhms     Enhancement HyperFET
IXFK100N25
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RFQ
IXYS MOSFET 100 Amps 250V 0.027 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 100 A 27 mOhms     Enhancement HyperFET
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