MOSFET - Kaimeite

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6 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	BSC010NE2LS	1+ $1.640 10+ $1.400 100+ $1.070 500+ $0.946 5000+ $0.662		PDF RFQ	33,436 In-stock	Infineon Technologies	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	25 V	100 A	800 uOhms	1.2 V	85 nC	Enhancement	OptiMOS
	BSC027N04LS G		GET PRICE	PDF RFQ	25,074 In-stock	Infineon Technologies	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	2.3 mOhms	1.2 V	85 nC	Enhancement	OptiMOS
	BSC014N04LS	1+ $1.490 10+ $1.260 100+ $1.010 500+ $0.883 5000+ $0.656		PDF RFQ	3,543 In-stock	Infineon Technologies	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	1.1 mOhms	1.2 V	85 nC	Enhancement
	BSC010NE2LSATMA1	1+ $1.640 10+ $1.400 100+ $1.070 500+ $0.946 5000+ $0.662		PDF RFQ	1,066 In-stock	Infineon Technologies	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	25 V	100 A	800 uOhms	1.2 V	85 nC	Enhancement	OptiMOS
	BSC027N04LSGATMA1		GET PRICE	PDF RFQ	7,000 In-stock	Infineon Technologies	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	2.3 mOhms	1.2 V	85 nC	Enhancement	OptiMOS
	BSC014N04LSATMA1	1+ $1.490 10+ $1.260 100+ $1.010 500+ $0.883 5000+ $0.656		PDF RFQ	4,330 In-stock	Infineon Technologies	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	1.1 mOhms	1.2 V	85 nC	Enhancement	OptiMOS

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