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- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,303
In-stock
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IR / Infineon | MOSFET 20V SINGLE N-CH 1.2mOhms 155nC | 12 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 990 Ohms | 155 nC | |||||||
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6,236
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 9 mOhms | 2 V to 4 V | 65 nC | Enhancement | |||
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4,658
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | ||||
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1,382
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms | 16 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.2 mOhms | 82 nC | |||||||
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4,286
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 29 nC | |||||||
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3,857
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.1 mOhms | 2.2 V | 58 nC | ||||||
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3,416
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | |||
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4,541
In-stock
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IR / Infineon | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 26 nC | |||||||
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3,990
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 2.35 V | 50 nC | ||||||
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20,590
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.15mOhms 52nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.15 mOhms | 52 nC | |||||||
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1,747
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.05 mOhms | 2.35 V | 52 nC | ||||||
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943
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.85 mOhms | 1.8 V | 77 nC | ||||
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3,005
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.4mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.5 mOhms | 2.5 V | 90 nC | ||||
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3,949
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 50 nC | Enhancement |
