- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,560
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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GET PRICE |
13,330
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
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GET PRICE |
12,030
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
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559
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.8 mOhms | Enhancement | OptiMOS | |||||
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696
In-stock
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Vishay Semiconductors | MOSFET 100V 100A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 0.007 Ohms | 1.5 V | 185 nC | Enhancement | TrenchFET | |||
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19,900
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.8 mOhms | Enhancement | OptiMOS | |||||
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350
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 16.3 mOhms | 2.4 V | 16.4 nC | NexFET | ||||
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969
In-stock
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Texas instruments | MOSFET CSD19532Q5B Pkg spin | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6.6 mOhms | 2.2 V | 44 nC | Enhancement | |||||
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215
In-stock
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Texas instruments | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 10.5 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 5.4 mOhms | Enhancement | OptiMOS | |||||
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100
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 100 V | 100 A | 6.2 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement |
