- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 93 nC | Enhancement | OptiMOS | ||||
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6,105
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | ||||
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4,630
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | |||||
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12,490
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | ||||
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3,685
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | ||||
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2,619
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.2 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | ||||
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3,942
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 41 nC | Enhancement | |||||
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6,985
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | ||||
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4,930
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | ||||
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2,975
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||||
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2,566
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.8 mOhms | 1 V | 52 nC | Enhancement | OptiMOS | ||||
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1,642
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 93 nC | Enhancement | OptiMOS | ||||
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507
In-stock
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Fairchild Semiconductor | MOSFET 40V 100A N-Chnl Pwr Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1 V | 96 nC | Enhancement | PowerTrench | ||||
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1,179
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.2 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | ||||
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4,825
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.8 mOhms | 1 V | 52 nC | Enhancement | OptiMOS | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | OptiMOS | ||||
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4,980
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 1 V | 131 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 93 nC | Enhancement |