- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,286
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 29 nC | |||||||||
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GET PRICE |
45,980
In-stock
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Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5 | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 1.9 V | 29 nC | NexFET | ||||
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400
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 1.5 V | 29 nC | Enhancement | NexFET |