MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPP076N12N3 G	1+ $2.510 10+ $2.140 100+ $1.710 500+ $1.500		PDF RFQ	473 In-stock	Infineon Technologies	MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	120 V	100 A	7.6 mOhms	3 V	76 nC		OptiMOS
	TK100S04N1L,LQ	1+ $2.550 10+ $2.060 100+ $1.640 500+ $1.440 2000+ $1.100		PDF RFQ	2,000 In-stock	Toshiba	MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	1.9 mOhms	2.5 V	76 nC	Enhancement
	CSD19505KCS	1+ $2.960 10+ $2.660 25+ $2.560 100+ $2.180		PDF RFQ	298 In-stock	Texas instruments	MOSFET 80V N-CH NexFET Pwr MOSFET	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	80 V	100 A	2.9 mOhms	2.6 V	76 nC		NexFET

IPP076N12N3 G

IPP076N12N3 G

Infineon Technologies

MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3

Stock : 473

1+: $2.510

10+: $2.140

100+: $1.710

500+: $1.500

TK100S04N1L,LQ

TK100S04N1L,LQ

Toshiba

MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK

Stock : 2,000

1+: $2.550

10+: $2.060

100+: $1.640

500+: $1.440

2000+: $1.100

CSD19505KCS

CSD19505KCS

Texas instruments

MOSFET 80V N-CH NexFET Pwr MOSFET

Stock : 298

1+: $2.960

10+: $2.660

25+: $2.560

100+: $2.180

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